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參數(shù)資料
| 型號： | DCR1050F |
| 英文描述： | Phase Control Thyristors (SCR) - Disc / Puk Devices |
| 中文描述： | 相位控制晶閘管（可控硅） -光盤/北辰設(shè)備 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | DCR1050F |
3/8
www.dynexsemi.com
DCR1050F
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
1.125 x 10
6
A
2
s
15.0
kA
0.72 x 10
6
A
2
s
12.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.038
Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.004
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
18.0
22.0
kN
–55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.008
o
C/W
o
C/W
Cathode dc
-
0.052
o
C/W
Double side cooled
-
0.022
o
C/W
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