參數(shù)資料
型號(hào): DCR1021SF
廠商: Dynex Semiconductor Ltd.
英文描述: Phase Control Thyristor Target Information
中文描述: 相位控制晶閘管目標(biāo)信息
文件頁(yè)數(shù): 8/11頁(yè)
文件大小: 211K
代理商: DCR1021SF
DCR1021SF
8/11
www.dynexsemi.com
Fig.9 Stored charge
Fig.10 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125C)
Fig.12 Maximum (limit) transient thermal impedance -
junction to case (C/W)
10000
1000
100
T
R
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/μs)
100
Max
Min
Conditions:
T
j
= 125
C
I
T
= 550A
V
R
= 100V
I
RR
Q
RA3
I
T
dI/dt
25% I
RR
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side
cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Fig.11 Multiple cycle surge current
0
5
10
15
20
25
30
1
2
3
4
Pulse width - (ms)
5
6
7
8
9
10
P
0
0.15
0.3
0.45
0.6
0.75
0.9
I
2
t
2
s
6
)
I
TSM
I
2
I
2
t =
2
x t
2
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
Number of cycles @ 50Hz
P
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