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參數(shù)資料
| 型號(hào)： | DCR1008SF |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 相位控制晶閘管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 111K |
| 代理商： | DCR1008SF |
6/8
www.dynexsemi.com
DCR1008SF
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125C)
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case
C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
d.c.
Halfwave
3 phase 120
6 phase 60
40
30
20
10
0
P
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
450
500
550
600
I
2
t
2
s
3
)
I
2
t
I
2
t =
2
x t
2
650
700
10
20 30
Fig.4 Stored charge
Fig.5 Gate characteristics
10000
T
S
1000
100
0.1
1.0
10
Rate of decay of on-state current, dI/dt - (A/μs)
100
100000
1000
100
10
R
R
10000
Min. I
RR
Max. Q
S
Min. Q
S
Max. I
RR
Conditions:
T
j
= 125
C, I
T
= 3000A
I
RM
Q
S
t
p
= 1.6ms
I
T
dI/dt
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
C
T
j
C
T
j
C
V
GD
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Pulse width
μs
Table gives pulse power P
GM
in Watts
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| DCR1008SF3030 | 制造商:n/a 功能描述:Power SCR |
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| DCR1008SF33 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
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