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參數(shù)資料
| 型號(hào)： | DCR1006SF25 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 1971 A, 2500 V, SCR |
| 封裝： | F, 4 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 114K |
| 代理商： | DCR1006SF25 |
6/8
www.dynexsemi.com
DCR1006SF
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
= 125C)
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case
C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
d.c.
Halfwave
3 phase 120
6 phase 60
40
30
20
10
0
P
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
0.5
0.75
I
2
t
2
s
6
)
I
2
t
I
2
t =
2
x t
2
1.0
50
1.25
10
20 30
1.5
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
1.0
10
100
Rate of decay of on-state current dI/dt - (A/μs)
10000
1000
100
T
S
I
T
= 2000A
I
= 1000A
Max. value
I
T
= 2000A
I
T
= 1000A
Min. value
Conditions;
Q
is total integral charge
Tl = 125
C
I
RR
Q
S
I
T
dI/dt
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
C
T
j
C
T
j
C
V
GD
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Pulse width
μs
Table gives pulse power P
GM
in Watts
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1006SF2525 | 制造商:n/a 功能描述:Power SCR |
| DCR1006SF26 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR1006SF2626 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1006SF27 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR1006SF2727 | 制造商:n/a 功能描述:Power SCR |
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