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參數(shù)資料
| 型號： | DCR1002SF13 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 2900 A, 1300 V, SCR |
| 封裝： | F, 4 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 121K |
| 代理商： | DCR1002SF13 |
6/9
www.dynexsemi.com
DCR1002SF
Fig.6 Gate characteristics
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
G
G
100W
50W
20W
10W
5W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
C
T
j
C
T
j
C
V
GD
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Pulse width
μs
Table gives pulse power P
GM
in Watts
0.1
0.01
0.001
T
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case
C/W
Double side
0.018
0.021
0.022
0.025
Anode side
0.036
0.038
0.040
0.043
d.c.
Halfwave
3 phase 120
6 phase 60
Fig.6 Transient thermal impedance - junction to case
Fig.4 Stored charge
Fig.5 Reverse recovery current
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/μs)
10000
1000
100
T
S
Conditions: I
T
= 1000A, V
R
=
–
100V,
T
j
= 125
C
Q
S
is total integral stored charge
I
RR
Q
S
I
T
dI/dt
Max Q
S
Min Q
S
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/μs)
10000
1000
100
R
R
Conditions: I
T
= 1000A, V
R
=
–
100V,
T
j
= 125
C
Max I
RR
Min I
RR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1002SF1313 | 制造商:n/a 功能描述:Power SCR |
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| DCR1002SF1414 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1003 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Thyristors |
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