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參數資料
| 型號： | DBTTW3C115N |
| 英文描述： | Bridge Rectifier · AC-Switches |
| 中文描述： | 橋式整流器· AC開關 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 65K |
| 代理商： | DBTTW3C115N |
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 115 N 12...18 (ISOPACK)
N
W3
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
T
vj
= - 40°C...T
vj max
V
DRM
, V
RRM
1200, 1400
1600, 1800
V
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
T
vj
= - 40°C...T
vj max
V
DSM
1200, 1400
1600, 1800
V
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= + 25°C...T
vj max
V
RSM
1300, 1500
1700, 1900
V
V
Durchlastrom-Grenzeffektivwert (pro Element)
RMS on-state current (per chip)
I
TRMSM
100
A
Effektivstrom (pro Phase)
RMS current (per arm)
T
C
= 85°C
T
C
= 73°C
T
A
= 45°C, KM 11
T
A
= 45°C, KM 33
T
A
= 35°C, KM 14 (V
L
= 45l/s)
T
A
= 35°C, KM 33 (V
L
= 90l/s)
I
RMS
115
141
38
55
97
115
A
A
A
A
A
A
Stostrom-Grenzwert
surge current
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
I
TSM
1000
870
A
A
Grenzlastintegral
I2t-value
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
I2t
5000
3780
A2s
A2s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
(di/dt)
cr
120
A/μs
f = 50Hz, i
GM
= 0,6A, di
G
/dt = 0,6A/μs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
(dv/dt)
cr
8. Kennbuchstabe / 8th letter F
1000
V/μs
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 150A
v
T
max.
1,81
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(T0)
0,95
V
Ersatzwiderstand
slope resistance
T
vj
=T
vj max
r
T
4,3
m
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 6V
I
GT
max.
150
mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 6V
V
GT
max.
2,5
V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
5,0
2,5
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max.
0,2
V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 6V, R
A
= 5
I
H
max.
200
mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 6V, R
GK
≥
20
i
GM
= 0,6A, di
G
/dt = 0,6A/μs, t
g
= 10μs
I
L
max.
600
mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse currents
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max.
10
mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
t
gd
max.
1,2
μs
T
vj
= 25°C, i
GM
= 0,6A, di
G
/dt = 0,6A/μs
MOD-E1; R. Jrke
09. Feb 99
A /99
Seite/page 1(9)
Datenblatt gilt auch für TD W3H
Datasheet also applicable for TD W3H
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