參數(shù)資料
型號(hào): DBFZ800R33KF2C20
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁(yè)數(shù): 6/7頁(yè)
文件大小: 234K
代理商: DBFZ800R33KF2C20
6
Technische Information / technical information
FZ800R12KE3
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2003-8-26
revision: 2.0
Vorlufige Daten
preliminary data
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
Etê = f (I)
Róò = 3,6 , V = 600 V, TY = 125°C
I [A]
E
0
200
400
600
800
1000 1200 1400 1600
50
45
40
35
30
25
20
15
10
5
0
Etê
Schaltverluste Diode-Wechselr. (typisch)
switching losses diode-inverter (typical)
Etê = f (R)
I = 800 A, V = 600 V, TY = 125°C
R []
E
0
4
8
12
16
20
24
28
32
36
45
40
35
30
25
20
15
10
5
0
Etê
Transienter Wrmewiderstand Diode-Wechselr.
transient thermal impedance diode-inverter
Zúì = f (t)
t [s]
Z
0,001
0,01
0,1
1
10
0,001
0,01
0,1
Zúì : Diode
i:
rí[K/W]:
í[s]:
τ
1
0,0011
0,00001187
2
0,0034
0,002364
3
0,0303
0,02601
4
0,0252
0,06499
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