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| 型號： | DBFT150R12KE3B520 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 335K |
| 代理商： | DBFT150R12KE3B520 |
1
Technische Information / technical information
FT150R12KE3_B4
IGBT-modules
IGBT-Module
prepared by: Christian Wolf
approved by: Robert Severin
date of publication: 2003-7-31
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
150
200
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
300
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
700
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 150 A, V = 15 V, TY = 25°C
I = 150 A, V = 15 V, TY = 125°C
V ùèú
1,70
2,00
2,15
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 6,00 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
1,40
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
5,0
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
10,5
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,40
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 150 A, V = 600 V
V = ±15 V, Róò = 2,4 , TY = 25°C
V = ±15 V, Róò = 2,4 , TY = 125°C
tá óò
0,28
0,30
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 150 A, V = 600 V
V = ±15 V, Róò = 2,4 , TY = 25°C
V = ±15 V, Róò = 2,4 , TY = 125°C
t
0,04
0,05
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 150 A, V = 600 V
V = ±15 V, Ró = 2,4 , TY = 25°C
V = ±15 V, Ró = 2,4 , TY = 125°C
tá ó
0,50
0,65
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 150 A, V = 600 V
V = ±15 V, Ró = 2,4 , TY = 25°C
V = ±15 V, Ró = 2,4 , TY = 125°C
t
0,10
0,20
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 150 A, V = 600 V, L = 70 nH
V = ±15 V, Róò = 2,4 , TY = 25°C
V = ±15 V, Róò = 2,4 , TY = 125°C
Eóò
6,50
10,0
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 150 A, V = 600 V, L = 70 nH
V = ±15 V, Ró = 2,4 , TY = 25°C
V = ±15 V, Ró = 2,4 , TY = 125°C
Eó
14,0
22,0
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
600
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,18
K/W
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