參數(shù)資料
型號: DBFS50R12KE330
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 1/9頁
文件大?。?/td> 186K
代理商: DBFS50R12KE330
vorlufige Daten
preliminary data
I
C,nom.
50
A
A
I
C
55
min.
typ.
max.
-
1,95
2,55
V
-
2,20
-
V
600
100
202
+20
50
100
-
5
-
-
-
6,5
4,5
2,5
mA
nA
gate emitter leakage current
Gate Emitter Reststrom
I
GES
400
-
-
I
CES
-
V
nF
2,2
-
0,3
-
μC
5,5
I2t
Grenzlastintegral
I2t value
630
V
GE
= 15V, T
vj
= 25°C, I
C
= I
C,nom
repetitive peak collector current
t
p
= 1ms, T
c
= 55°C
Periodischer Kollektor Spitzenstrom
P
tot
T
c
= 25°C, Transistor
Gesamt Verlustleistung
total power dissipation
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 55°C
Kollektor Dauergleichstrom
DC collector current
Elektrische Eigenschaften / electrical properties
T
vj
= 25°C
A
revision: 2.1
T
c
= 25°C
I
FRM
V
GE(th)
C
ies
V
GE
= -15V...+15V
V
GE
= 15V, T
vj
= 125°C, I
C
= I
C,nom
Q
G
t
p
= 1ms
I
F
Gate Emitter Spitzenspannung
gate emitter peak voltage
Gate Schwellenspannung
gate threshold voltage
Dauergleichstrom
DC forward current
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
insulation test voltage
date of publication: 2002-11-25
V
CE
= V
GE
, T
vj
= 25°C, I
C
= 1mA
Rückwirkungskapazitt
reverse transfer capacitance
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
gate charge
Gateladung
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Technische Information / technical information
FS50R06YL4
IGBT-Module
IGBT-Modules
kV
V
CES
V
A
I
CRM
V
ISOL
V
A2s
W
A
V
GES
repetitive peak forward current
V
CEsat
Charakteristische Werte / characteristic values
Periodischer Spitzenstrom
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Isolations Prüfspannung
RMS, f= 50Hz, t= 1min
Transistor Wechselrichter / transistor inverter
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
prepared by: P. Kanschat
Kollektor Emitter Reststrom
collector emitter cut off current
approved: R. Keggenhoff
C
res
nF
-
0,2
1 (9)
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