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I
C, nom
I
C
400
580
A
A
min.
typ.
max.
-
1,7
2,15
V
-
2,0
-
V
400
nA
collector emitter cut off current
Gate Emitter Reststrom
gate emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
5
Gateladung
gate charge
V
GE
= -15V...+15V
Q
G
C
res
-
1,15
800
mA
-
μC
34
k A2s
6,5
V
nF
nF
gate emitter peak voltage
Grenzlastintegral
I2t value
gate threshold voltage
V
GE(th)
I2t
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
V
ISOL
W
A
P
tot
2000
I
FRM
DC forward current
t
p
= 1ms
repetitive peak forward current
T
c
= 25°C; Transistor
repetitive peak collector current
t
p
= 1ms, T
c
= 80°C
Periodischer Kollektor Spitzenstrom
Gesamt Verlustleistung
total power dissipation
V
-
A
-
I
C
= 400A, V
GE
= 15V, T
vj
= 125°C
Gate Schwellenspannung
I
C
= 16mA, V
CE
= V
GE
, T
vj
= 25°C
DC collector current
reverse transfer capacitance
Rückwirkungskapazitt
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Hchstzulssige Werte / maximum rated values
Kollektor Emitter Sperrspannung
collector emitter voltage
T
c
= 80°C
T
c
= 25°C
Kollektor Dauergleichstrom
T
vj
= 25°C
1200
V
Elektrische Eigenschaften / electrical properties
Transistor Wechselrichter / transistor inverter
date of publication: 2003-03-18
Kollektor Emitter Sttigungsspannung
collector emitter saturation voltage
I
C
= 400A, V
GE
= 15V, T
vj
= 25°C
kV
Periodischer Spitzenstrom
A
-
-
-
-
3,7
Gate Emitter Spitzenspannung
V
CEsat
Charakteristische Werte / characteristic values
approved: SM TM; Wilhelm Rusche
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
Dauergleichstrom
I
F
Technische Information / technical information
FF400R12KE3
IGBT-Module
IGBT-Modules
5,0
5,8
28
2,5
-
-
V
GES
V
CES
400
I
CRM
800
+/- 20
C
ies
revision: 2.0
Eingangskapazitt
input capacitance
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
Kollektor Emitter Reststrom
prepared by: MOD -D2; Martin Knecht
vorlufiges Datenblatt
preliminary data sheet
1/8
DB_FF400R12KE3_2.0
2003-03-18