參數(shù)資料
型號(hào)： DBFB20R06KL4B121
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 291K
代理商： DBFB20R06KL4B121
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB20R06KL4B1
Vorlufig
preliminary
Modul Isolation/ module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter/ diode rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150°C, I
F
=
20 A
V
F
-
0,85
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
0,63
-
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
10
-
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
= 800 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
11
-
m
Transistor Wechselrichter/ transistor inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
20 A
20 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
0,5mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,1
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
=
t
P
≤
10μs, V
GE
≤
15V, R
G
=
T
vj
≤
125°C, V
CC
=
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
47 Ohm
300 V
47 Ohm
80 nH
300 V
47 Ohm
80 nH
47 Ohm
360 V
t
d,on
-
-
22
31
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
t
r
-
-
23
37
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
t
d,off
-
-
143
154
-
-
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
22
38
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
E
on
-
0,7
-
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
E
off
-
0,6
-
mJ
Kurzschluverhalten
SC Data
I
SC
-
90
-
A
mA
V
GE
= 0V, T
vj
=25°C, V
CE
=
I
CES
5,0
-
600V
-
2(12)
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