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參數(shù)資料
| 型號： | DBFB10R06KL4GB121 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 292K |
| 代理商： | DBFB10R06KL4GB121 |
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB10R06KL4GB1
Vorlufig
preliminary
Modul Isolation / module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter / diode rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150°C, I
F
= 10 A
V
F
-
0,9
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
0,67
-
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
21
-
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
= 800 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
11
-
m
Transistor Wechselrichter / transistor inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
10 A
10 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
0,35mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
0,8
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 80 nH
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 80 nH
t
P
≤
10μs, V
GE
≤
15V, R
G
=
T
vj
≤
125°C, V
CC
=
dI/dt =
82 Ohm
82 Ohm
t
d,on
-
-
32
30
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
82 Ohm
82 Ohm
t
r
-
-
26
28
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
82 Ohm
82 Ohm
300 V
82 Ohm
82 Ohm
300 V
82 Ohm
t
d,off
-
-
234
230
-
-
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
10
30
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
E
on
-
0,36
-
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
82 Ohm
E
off
-
0,44
-
mJ
Kurzschluverhalten
SC Data
82 Ohm
360 V
400 A/μs
I
SC
-
40
-
A
V
GE
= 0V, T
vj
=25°C, V
CE
=
600V
mA
I
CES
-
5,0
-
2(12)
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