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參數(shù)資料
| 型號： | DBDF200R12KE330 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | DBDF200R12KE330 |
Technische Information / technical information
DF200R12KE3
IGBT-Module
IGBT-Modules
min.
typ.
max.
-
0,25
-
μs
-
0,30
-
μs
-
0,09
-
μs
-
0,10
-
μs
-
0,55
-
μs
-
0,65
-
μs
-
0,13
-
μs
-
0,18
-
μs
-
1,65
2,15
V
-
1,65
-
V
-
150
-
A
-
190
-
A
-
20
-
μC
-
36
-
μC
-
9
-
mJ
-
17
-
mJ
-
A
SC data
V
CC
= 900V, V
CEmax
= V
CES
- L
σ
CE
·di/dt
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
-
nH
m
-
lead resistance, terminal-chip
T
c
= 25°C
V
R
= 600V, V
GE
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Q
r
Ausschaltenergie pro Puls
reverse recovery energy
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
I
F
= 200A, -di
F
/dt= 2000A/μs
Sperrverzgerungsladung
recovered charge
I
F
=200A, -di
F
/dt= 2000A/μs
R
CC′/EE′
L
σ
CE
Kurzschlussverhalten
0,7
-
20
t
P
≤
10μs, V
GE
≤
15V, T
Vj
≤
125°C
I
SC
-
800
-
mJ
-
mJ
35
E
on
I
C
= 200A, V
CC
= 600V, L
σ
= 80nH
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
15
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
-
E
off
I
C
= 200A, V
CC
= 600V, L
σ
= 80nH
t
d,off
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
I
C
= 200A, V
CC
= 600V
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
t
d,on
t
f
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
-
I
C
= 200A, V
CC
= 600V
t
r
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 25°C
V
GE
= ±15V, R
G
= 3,6
, T
vj
= 125°C
I
C
= 200A, V
CC
= 600V
-
V
F
forward voltage
Durchlassspannung
I
F
= 200A, V
GE
= 0V, T
vj
= 25°C
I
F
= 200A, V
GE
= 0V, T
vj
= 125°C
Inversdiode / free wheel diode
I
RM
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
I
F
=200A, -di
F
/dt= 2000A/μs
Charakteristische Werte / characteristic values
Rückstromspitze
peak reverse recovery current
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Einschaltverzgerungszeit (induktive Last)
turn on delay time (inductive load)
Abschaltverzgerungszeit (induktive Last)
turn off delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 200A, V
CC
= 600V
Leitungswiderstand, Anschluss-Chip
stray inductance module
Modulinduktivitt
Fallzeit (induktive Last)
fall time (inductive load)
2 (8)
DB_DF200R12KE3_3.0
2002-10-07
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