參數(shù)資料
型號: DBD10G-TM
元件分類: 橋式整流
英文描述: 1 A, SILICON, BRIDGE RECTIFIER DIODE
文件頁數(shù): 1/3頁
文件大小: 37K
代理商: DBD10G-TM
DBD10
No.7030-1/3
Features
Plastic molded structure.
Peak reverse voltage : VRM=200V, 600V.
Average rectified current : IO=1.0A.
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7030A
DBD10
Package Dimensions
unit : mm
1314
Surface mount type (TM emboss taping)
[DBD10]
N0901 GI IM / 73001 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
6.5
1.0
10.0
C0.8
2.5
0.1
6.8
3.0
1.3
0.25
SANYO : DBD10-TM
--
+
Package Dimensions
unit : mm
1313
[DBD10]
7.62
max15
°
max15
°
6.5
3.2
3.7max
0.55
C0.8
0.25
2.5
5.0
6.8
SANYO : DBD10
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