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參數(shù)資料
| 型號(hào)： | DB5010P |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | 50 AMP SILICON BRIDGE RECTIFIERS |
| 中文描述： | 50安培硅橋式整流器 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 492K |
| 代理商： | DB5010P |
RATING&CHARACTERISTICCURVESFORSERIESDB5000P -DB5010P andSERIES ADB5004P - ADB5008P
DataSheetNo.BRDB-5000P-2A
ABDB-5000P-2A
Tel.:(310)767-1052Fax:(310)767-7958
DIOTECELECTRONICSCORP.
Gardena,CA 90248U.S.A
18020HobartBlvd.,UnitB
NumberofCyclesat60Hz
50 AMP SILICONBRIDGERECTIFIERS
-
.
-
/
0
0
1
2
0
3
4
5
FIGURE2.MAXIMUMNON-REPETITIVESURGECURRENT
E52
30
10
0
20
40
50
60
25
75
125
175
FIGURE1.FORWARDCURRENTDERATINGCURVE
CaseTemperature, C
6
AverageForwardCurrent,Io
(Amperes)
60HzResistiveorInductiveLoads
PeakForwardSurgeCurrent
(Amperes)
7
8:
;=<<
>
@AA
BCC
DEE
FGG
HII
J:KK
InstantaneousReverseCurrent,I
(Milcroamperes)
FIGURE4.TYPICAL REVERSECHARACTERISTICS
PercentofRatedPeakReverseVoltage
.01
0.1
1.0
10
L:MMO:PQSRUTV
WXZY[
\
]^`_a
T =125 C
T =25 C
FIGURE3.TYPICAL FORWARDCHARACTERISTICPERDIODE
InstantaneousForwardVoltage(Volts)
InstantaneousForwardCurrent
(Amperes)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10
f:gg
h:iii
T =25 C
PulseWidth=300 S
1%DutyCycle
m
BridgeMountedon
9"x4"x5"Thick
(22.9cmx10.2cmx12.9cm)
Finned Al.Plate
T =175 C
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