| 型號(hào) | 廠(chǎng)商 | 描述 |
| idt7205s35tpb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50d 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50db 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50j 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50jb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50l 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50lb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50p 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50pb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50so 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50sob 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50td 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50tdb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | High-speed diodes - C<sub>d</sub> max.: 4 pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 25@VR=20V nA; IFRM: 450 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 100 V |
| idt7205s50tp 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s50tpb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s80d 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s80db 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s80j 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7205s80l 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l15tpb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual c.c. ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 80 V |
| idt7206l20d 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | High-speed diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 80 V |
| idt7206l20db 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | High-speed double diode - C<sub>d</sub> max.: 1.5 pF; Configuration: dual series ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 80 V |
| idt7206l20j 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | High-speed double diode - C<sub>d</sub> max.: 2 pF; Configuration: dual c.a. ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 500@VR=80V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 80 V |
| idt7206l20jb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20l 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20lb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20p 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20pb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20so 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20sob 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20td 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20tdb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20tp 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l20tpb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25d 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25db 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25j 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25jb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25l 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l25lb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l30tp 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l30tpb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V |
| idt7206l35d 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V |
| idt7206l35db 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.385 A; R<sub>DS(on)</sub>: 3000@10V4000@4.5V mOhm; V<sub>DS</sub>max: 60 V |
| idt7206l35j 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.475 A; R<sub>DS(on)</sub>: 2000@10V4000@4.5V mOhm; V<sub>DS</sub>max: 60 V |
| idt7206l35jb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 3900@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V |
| idt7206l35l 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l35lb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 |
| idt7206l35p 2 3 4 5 6 7 8 9 10 11 12 13 14 |
INTEGRATED DEVICE TECHNOLOGY INC | PNP general-purpose transistor - Complement: 2PC4081Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 40 V |
| idt7206l35pb 2 3 4 5 6 7 8 9 10 11 12 13 14 |
Integrated Device Technology, Inc. | PNP general-purpose transistor - Complement: 2PC4081R ; fT min: 100 MHz; hFE max: 390 ; hFE min: 180 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 40 V |