| 型號(hào) | 廠商 | 描述 |
| psd935g1v-a-12ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-12m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-12mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-12u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-12ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 39pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: R Failure Rate |
| psd935g1v-a-15b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-15b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-15j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-15ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-15m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-a-90ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-b-12b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-b-12b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 390pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| psd935g1v-b-12j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-b-12ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-b-12m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g1v-b-12mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-70ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-70m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-70mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-70u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-70ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 560pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| psd935g3v-a-90b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-90b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-a-90j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 560pF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-1%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| psd935g3v-b-15u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-15ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-20ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-70b81 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-70b81i 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-70j 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 560pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Sn60 Coated; Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| psd935g3v-b-70ji 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935g3v-b-70m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 560pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder Coated (Sn/Pb, 70/30); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: M Failure Rate |
| psd935g3v-b-70mi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935f1-70u 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |
| psd935f1-70ui 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導(dǎo)體 | Configurable Memory System on a Chip for 8-Bit Microcontrollers |