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參數(shù)資料
| 型號： | DAN208 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon-Twin Diodes Center tap |
| 中文描述： | 1 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | 8.50 X 3.50 MM, 6.60 MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 122K |
| 代理商： | DAN208 |
1
) Leads kept at ambient temperature at a distance of 3 mm from case
Anschludrhte in 3 mm Abstand von Gehuse auf Umgebungstemperatur gehalten
354
28.02.2002
DAN 208 / DAP 208 (1.2 W)
Silicon-Twin Diodes
Center tap
Silizium-Doppeldioden
Mittelpunktschaltung
Nominal power dissipation
Nenn-Verlustleistung
1.2 W
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
150 V
3 Pin-Plastic case
3 Pin-Kunststoffgehuse
8.5 x 3.5 x 6.6 [mm]
Weight approx. – Gewicht ca.
0.6 g
Dimensions / Mae in mm
Standard packaging: bulk
Standard Lieferform: lose im Karton
see page 22
s. Seite 22
"DAP": common anodes / gemeinsame Anoden
"DAN": common cathodes / gemeinsame Kathoden
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
100
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
150
DAN 208
DAP 208
100
150
Max. average forward rectified current, R-load,
for one diode operation only
for simultaneous operation
T
A
= 25 C
I
FAV
I
FAV
1.0 A
1
)
2.0 A
1
)
Dauergrenzstrom in Einwegschaltung mit R-Last,
für eine einzelne Diode
bei gleichzeitigem Betrieb
T
U
= 25 C
I
FAV
I
FAV
1.0 A
1
)
2.0 A
1
)
Peak forward surge current, 50 Hz half sine-wave
Stostrom für eine 50 Hz Sinus-Halbwelle
T
A
= 25 C
I
FSM
10 A
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