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參數資料
| 型號： | DA28F016SV-070 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 中文描述： | 1M X 16 FLASH 5V PROM, 70 ns, PDSO56 |
| 封裝： | 23.70 X 16 MM, SSOP-56 |
| 文件頁數： | 52/63頁 |
| 文件大?。?/td> | 635K |
| 代理商： | DA28F016SV-070 |
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28F016SV FlashFile MEMORY
E
52
5.9
AC Characteristics for CE#
—Controlled Command Write Operations
(1)
(Continued)
V
CC
= 5V
± 0.5V, 5V ± 0.25V, T
A
= 0° to +70°C,
–40°C to +85°C
Temp
Commercial
Extended
Speed
–65
–70
–80
Sym
Parameter
V
CC
5V ± 5%
5V ± 10%
5V ± 10%
Unit
Load
30 pF
50 pF
50 pF
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
t
PHEL
RP# High Recovery
to CE# Going Low
3,7
0.300
1
(9)
0.300
(10)
1
μs
t
EHGL
Write Recovery
before Read
55
60
65
ns
t
QVVL
1,2
V
PP
Hold from Valid
Status Register
(CSR, GSR, BSR)
Data at RY/BY# High
3
0
0
0
μs
t
EHQV
1
Duration of Program
Operation
3,4,5,11
4.5
6
TBD
4.5
6
TBD
4.5
6
TBD
μs
t
EHQV
2
Duration of Block
Erase Operation
3,4
0.3
0.6
10
0.3
0.6
10
0.3
0.6
10
sec
NOTES:
1. Read timings during program and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, not 100% tested. Guaranteed by design.
4. Program/erase durations are measured to valid Status Data. V
PP
= 12V ± 0.6V.
5. Word/byte program operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE# for all command write operations.
7. CE
X
# is defined as the latter of CE
0
# or CE
1
# going low, or the first of CE
0
# or CE
1
# going high.
8. Device speeds are defined as:
65/70 ns at V
CC
= 5V equivalent to
75 ns at V
CC
= 3.3V
70/80 ns at V
CC
= 5V equivalent to
120 ns at V
CC
= 3.3V
9. See the high speed AC Input/Output Reference Waveforms and AC Testing Load Circuit.
10. See the standard AC Input/Output Reference Waveforms and AC Testing Load Circuit.
11. The TBD information will be available in a technical paper. Please contact Intel’s Application Hotline or your local sales
office for more information.
相關PDF資料 |
PDF描述 |
|---|---|
| DA28F016SV-075 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-080 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-120 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016XS20 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS-15 | 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| DA28F016SV-075 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-080 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016SV-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| DA28F016XS15 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
| DA28F016XS-15 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY |
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