參數(shù)資料
型號(hào)： DA28F016SA-070
廠商： INTEL CORP
元件分類： DRAM
英文描述： 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
中文描述： 1M X 16 FLASH 12V PROM, 70 ns, PDSO56
封裝： 23.70 X 16 MM, 1.80 MM HEIGHT, SSOP-56
文件頁(yè)數(shù)： 1/63頁(yè)
文件大?。?/td> 635K
代理商： DA28F016SA-070
E
7/11/97 11:03 AM 29052807.DOC
July 1997
Order Number: 290528-007
n
SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
n
65 ns Access Time
n
1 Million Erase Cycles per Block
n
30.8 MB/sec Burst Write Transfer Rate
n
0.48 MB/sec Sustainable Write Transfer
Rate
n
Configurable x8 or x16 Operation
n
56-Lead TSOP and SSOP Type I
Packages
n
Backwards-Compatible with 28F016SA,
28F008SA Command Set
n
Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel
28F008SA
Page Buffer Program
n
2 μA Typical Deep Power-Down
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32 Independently Lockable Blocks
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State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable V
voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible V
and V
voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 μm ETOX IV process technology.
28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile MEMORY
Includes Commercial and Extended Temperature Specifications
相關(guān)PDF資料
PDF描述
DA28F016SA-080 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-100 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-120 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-150 28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016XS15 16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DA28F016SA-080 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
DA28F016SA-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
DA28F016SA-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
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