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參數(shù)資料
| 型號： | D65H2 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | PNP EXPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 進步黨EXPITAXIAL硅晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | D65H2 |
UTC D65H2
PNP EXPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC D65H2 is a general purpose power application
and switching.
FEATURE
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds
PNP EXPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R203-002,A
TO-220
1
1:BASE 2:COLLECTOR 3:EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C)
PARAMETER
Collector to Emitter Voltage
Emitter To Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Dissipation(Tc=25
°
C)
Collector Dissipation(Ta=25
°
C)
Junction Temperature
Storage Temperature
*PW<=10mS,Duty Cycle<=50%
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff current
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
SYMBOL
V
CEO
V
EBO
I
C
I
C
Pc
Pc
T
j
T
stg
VALUE
-30
-5
-15
-25
50
1.67
150
-55 ~ +150
UNIT
V
V
A
A
W
W
°
C
°
C
SYMBOL
I
CES
I
EBO
V
CE
(SAT)
TEST CONDITIONS
V
CE
=Rated ; V
CEO
,V
EB
=0
V
EB
=-5V,Ic=0
I
C
=-10A,I
B
=-0.1A
MIN
TYP
MAX
-10
-10
0.6
UNIT
μ
A
μ
A
V
V
BE
(SAT)
h
FE1
F
T
C
CB
ton
tstg
tf
I
C
=-10A,I
B
=-1A
I
C
=-10A,V
CE
=-1V
V
CE
=-10V,I
C
=-0.5A
VCB=-10V,f=1MHZ
Ic=-5A,I
B
=-0.5A
I
B
=-0.5A
-1.5
V
100
40
350
150
600
120
MHZ
PF
nS
nS
nS
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