參數(shù)資料
型號: D640H90VI
廠商: Spansion Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同步讀/寫閃存
文件頁數(shù): 5/54頁
文件大小: 850K
代理商: D640H90VI
June 7, 2005
Am29DL640H
3
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Am29DL640H Device Bus Operations ................................8
Requirements for Reading Array Data .....................................8
Writing Commands/Command Sequences ..............................9
Accelerated ProgramOperation ...............................................9
Autoselect Functions ................................................................9
Simultaneous Read/Write Operations with Zero Latency .........9
Automatic Sleep Mode ...........................................................10
RESET# Hardware Reset Pin ...............................................10
Output Disable Mode ..............................................................10
Table 2. Am29DL640H Sector Architecture ....................................10
Table 3. Bank Address ....................................................................13
Table 5. Am29DL640H Autoselect Codes, (High Voltage Method) 14
Table 6. Am29DL640H Boot Sector/Sector Block Addresses for
Protection/Unprotection ...................................................................15
Write Protect (WP#) ................................................................15
Table 7. WP#/ACC Modes ..............................................................16
Temporary Sector Unprotect ..................................................16
Figure 1. Temporary Sector Unprotect Operation........................... 16
Figure 2. In-SystemSector Protect/Unprotect Algorithms.............. 17
Secured Silicon Sector
FlashMemoryRegion ............................................................18
Figure 3. Secured Silicon Sector Protect Verify.............................. 19
Hardware Data Protection ......................................................19
Low VCC Write Inhibit ............................................................19
Write Pulse “Glitch” Protection ...............................................19
Logical Inhibit ..........................................................................19
Power-Up Write Inhibit ............................................................19
Common Flash Memory Interface (CFI). . . . . . . 19
Command Definitions . . . . . . . . . . . . . . . . . . . . . 23
Reading Array Data ................................................................23
Reset Command .....................................................................23
Autoselect Command Sequence ............................................23
Enter Secured Silicon Sector/Exit Secured Silicon Sector
Command Sequence ..............................................................23
Byte/Word ProgramCommand Sequence .............................24
Unlock Bypass Command Sequence .....................................24
Figure 4. ProgramOperation.......................................................... 25
Chip Erase Command Sequence ...........................................25
Sector Erase Command Sequence ........................................25
Figure 5. Erase Operation............................................................... 26
Erase Suspend/Erase Resume Commands ...........................26
Write Operation Status . . . . . . . . . . . . . . . . . . . . 28
DQ7: Data#Polling .................................................................28
Figure 6. Data#Polling Algorithm................................................... 28
DQ6: Toggle Bit I ....................................................................29
Figure 7. Toggle Bit Algorithm....................................................... 29
DQ2: Toggle Bit II ...................................................................30
Reading Toggle Bits DQ6/DQ2 ...............................................30
DQ5: Exceeded Timng Limts ................................................30
DQ3: Sector Erase Timer .......................................................30
Table 13. Write Operation Status ...................................................31
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 32
Figure 8. MaximumNegative OvershootWaveform...................... 32
Figure 9. MaximumPositive OvershootWaveform........................ 32
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 10. I
CC1
Current vs. Time (Showing Active and
AutomaticSleepCurrents)............................................................. 34
Figure 11. Typical I
vs. Frequency............................................ 34
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 12. Test Setup.................................................................... 35
Figure 13. Input Waveforms and Measurement Levels................. 35
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Read-Only Operations ...........................................................36
Figure 14. Read Operation Timngs............................................... 36
Hardware Reset (RESET#) ....................................................37
Figure 15. Reset Timngs............................................................... 37
Word/Byte Configuration (BYTE#) ..........................................38
Figure 16. BYTE#Timngs for Read Operations............................ 38
Figure 17. BYTE#Timngs for Write Operations............................ 38
Erase and ProgramOperations ..............................................39
Figure 18. ProgramOperation Timngs.......................................... 40
Figure 19. Accelerated ProgramTimng Diagram.......................... 40
Figure 20. Chip/Sector Erase Operation Timngs.......................... 41
Figure 21. Back-to-back Read/Write Cycle Timngs...................... 42
Figure 22. Data#Polling Timngs (During Embedded Algorithms). 42
Figure 23. Toggle Bit Timngs (During Embedded Algorithms)...... 43
Figure 24. DQ2 vs. DQ6................................................................. 43
Temporary Sector Unprotect ..................................................44
Figure 25. Temporary Sector Unprotect Timng Diagram.............. 44
Figure 26. Sector/Sector Block Protect and
Unprotect Timng Diagram............................................................. 45
Alternate CE#Controlled Erase and ProgramOperations .....46
Figure 27. Alternate CE#Controlled Write (Erase/Program
OperationTimngs.......................................................................... 47
Erase And Programming Performance. . . . . . . . 48
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 48
TSOP & BGA Pin Capacitance. . . . . . . . . . . . . . . 48
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
FBE063—63-Ball Fine-Pitch Ball Grid Array (
f
BGA)
12x11mmpackage ..............................................................49
TS 048—48-Pin Standard TSOP ............................................50
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 51
TS 048—48-Pin Standard TSOP. . . . . . . . . . . . . . 52
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 53
相關(guān)PDF資料
PDF描述
D6455A-11 Telecommunication IC
D6455B-11 Telecommunication IC
D6471A-11 Telecomm/Datacomm
D6471B-11 Telecomm/Datacomm
D6471C-11 Telecomm/Datacomm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
D64130-000 功能描述:熱收縮管和套管 NT-MIL-1-0-SP RoHS:否 制造商:3M Electronic Specialty 類型:Tubing 材料:Polyolefin, Flexible 顏色:Clear 最低收縮溫度:+ 100 C 恢復(fù)直徑: 長度:100 ft 內(nèi)徑:1.5 in 收縮率:2:1
D6417709SBP100BV 制造商:Renesas 功能描述:MCU 32-bit SuperH RISC ROMLess 1.7V/3.3V 240-Pin LFBGA
D6417709SBP133B 功能描述:MPU 3V 16K 133MHZ 240BGA RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:SuperH® SH7700 標(biāo)準(zhǔn)包裝:160 系列:S08 核心處理器:S08 芯體尺寸:8-位 速度:40MHz 連通性:I²C,LIN,SCI,SPI 外圍設(shè)備:LCD,LVD,POR,PWM,WDT 輸入/輸出數(shù):53 程序存儲器容量:32KB(32K x 8) 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1.9K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 12x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:64-LQFP 包裝:托盤
D6417709SBP133BV 功能描述:MPU 3V 16K PB-FREE 240-BGA RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:SuperH® SH7700 標(biāo)準(zhǔn)包裝:160 系列:S08 核心處理器:S08 芯體尺寸:8-位 速度:40MHz 連通性:I²C,LIN,SCI,SPI 外圍設(shè)備:LCD,LVD,POR,PWM,WDT 輸入/輸出數(shù):53 程序存儲器容量:32KB(32K x 8) 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:1.9K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 12x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:64-LQFP 包裝:托盤
D6417709SBP167BV 功能描述:IC SUPERH MPU ROMLESS 240BGA RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:SuperH® SH7700 標(biāo)準(zhǔn)包裝:1 系列:AVR® ATmega 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C,SPI,UART/USART 外圍設(shè)備:欠壓檢測/復(fù)位,POR,PWM,WDT 輸入/輸出數(shù):32 程序存儲器容量:32KB(16K x 16) 程序存儲器類型:閃存 EEPROM 大小:1K x 8 RAM 容量:2K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 8x10b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 125°C 封裝/外殼:44-TQFP 包裝:剪切帶 (CT) 其它名稱:ATMEGA324P-B15AZCT