參數(shù)資料
型號(hào): D44H8
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(10A,30-80V,50W)
中文描述: 功率晶體管(10A條,30 - 80V的,50瓦)
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 153K
代理商: D44H8
D
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 100 mA, I
B
= 0
V
CB
= 60 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
60
V
μ
A
μ
A
10
100
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 2.0 A, V
CE
= 1.0 V
I
C
= 4.0 A, V
CE
= 1.0 V
I
C
= 8.0 A, I
B
= 0.4 A
I
C
= 8.0 A, I
B
= 0.8 A
I
C
= 10 mA, V
CE
= 2.0 V
60
40
V
CE(
sat
)
V
BE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
1.0
1.5
0.65
V
V
V
0.52
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
f
T
I
C
= 500 mA, V
CE
= 10 V,
50
MHz
DC Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
P 4Q
0.1
1
10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V
C
β
= 10
125 oC
- 40 oC
25 °C
Typical Pulsed Current Gain
vs Collector Current
0.01 0.02
0.05 0.1
I - COLLECTOR CURRENT (A)
0.2
0.5
1
2
5
10
0
50
100
150
200
h
F
125 °C
25 °C
- 40 °C
Vce = 5V
NPN Power Amplifier
(continued)
相關(guān)PDF資料
PDF描述
D44Q1 TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 4A I(C) | TO-220AB
D44Q3 TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 4A I(C) | TO-220AB
D44Q5 TRANSISTOR | BJT | NPN | 225V V(BR)CEO | 4A I(C) | TO-220AB
D44VH7 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-220AB
D452K SCR / Diode Presspacks
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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