參數(shù)資料
型號(hào)： D3SBA80
廠商： Electronics Industry Public Company Limited
英文描述： SILICON BRIDGE RECTIFIER
中文描述： 硅橋式整流器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 63K
代理商： D3SBA80
D3SBA10 ~ D3SBA80
SILICON BRIDGE RECTIFIER
PRV : 100 ~ 800 Volts
Io : 4.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0
0
~
~
+
0.150 (3.8)
0.134 (3.4)
0.189 (4.8)
0.173 (4.4)
0
0
0.996 (25.3)
0.972 (24.7)
C3
0
0
0
0
0.032 (0.8)
0.043 (1.1)
0
0
0.114 (2.9)
0.098 (2.5)
SYMBOL
D3SBA
10
D3SBA
20
D3SBA
40
D3SBA
60
D3SBA
80
UNIT
Maximum Reverse Voltage
V
RM
100
200
400
600
800
V
Maximum Average Forward Current
4 (With heatsink, Tc = 108
°
C)
(50Hz Sine wave, R-load)
2.3 (Without heatsink, Ta = 25
°
C)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms
≤
t < 10 ms, Tc=25
°
C
I
2
t
32
A
2
S
Maximum Forward Voltage per Diode at I
F
= 2.0 A.
V
F
1.05
V
Maximum DC Reverse Current, V
R
=V
RM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
R
θ
JC
R
θ
JA
T
J
5.5 (With heatsink)
°
C/W
Maximum Thermal Resistance, Junction to Ambient
30 (Without heatsink)
°
C/W
Operating Junction Temperature Range
150
°
C
Storage Temperature Range
T
STG
- 40 to + 150
°
C
Page 1 of 2
Rev.
02 : March 25, 2005
A
A
I
R
10
μ
A
RATING
I
F(AV)
I
FSM
80
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