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參數(shù)資料
| 型號： | D2208UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, DK, 5 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | D2208UK |
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
40
8
4
7
0.5
1.44
10
40
20:1
96
80
8
PER SIDE
V
GS
=
–
5V f = 1MHz
LAB
SEME
D2208UK
Document Number 3041
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSemelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 1.6A
P
O
= 40W
V
DS
= 12.5V
f = 500MHz
I
DQ
= 1.6A
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
f = 1MHz
f = 1MHz
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise stated)
Drain
–
Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
BV
DSS
I
DSS
I
GSS
G
PS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj
–
case
Thermal Resistance Junction
–
Case
Max. 1.3
°
C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
TOTAL DEVICE
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