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參數(shù)資料
| 型號： | D2203UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, DQ, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 16K |
| 代理商： | D2203UK |
D2203UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
40
1
1
7
1
0.18
10
40
20:1
12
10
1
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
P
O
= 5W
V
DS
= 12.5V
f = 1GHz
I
DQ
= 0.2A
V
DS
= 0
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 5.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
TOTAL DEVICE
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D2210UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-12.5V-1GHz,單端式)) |
| D2210UK | METAL GATE RF SILICON FET |
| D2211UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-7.2V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(10W-7.2V-1GHz,單端式)) |
| D2211 | METAL GATE RF SILICON FET |
| D2211UK | METAL GATE RF SILICON FET |
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