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參數(shù)資料
| 型號： | D2089 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | D2089 |
D2089UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance*
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
|
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 28V
f = 30MHz
V
DS
= 0V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
I
DQ
= 75mA
P
in
= 5mW
V
GS
= –5V f = 1MHz
V
DS
= 28V V
GS
= 0
f = 1MHz
V
mA
μ
A
V
mhos
mW
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
P
out
Power Output
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
65
1
1
7
1
0.18
750
12
6
0.5
R
THj–case
Thermal Resistance Junction – Case
Max. 30°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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| D208EI | 制造商:MPD 制造商全稱:MicroPower Direct, LLC 功能描述:Low Cost, 2W SIP High Isolation DC/DC Converters |
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