- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄376513 > D2085UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-0.8GHz)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(120W-28V-0.8GHz)) PDF資料下載
參數(shù)資料
| 型號(hào)： | D2085UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-0.8GHz)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(120W-28V-0.8GHz)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（120瓦- 28V的- 0.8GHz至）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（120瓦- 28V的- 0.8GHz至）） |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 13K |
| 代理商： | D2085UK |
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/96
D2085UK
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS(th)
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Threshold Voltage
g
m
*
C
iss
C
oss
C
rss
V
GS(th)match
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Threshold Matching Voltage
Between Sides
I = 100mA
V = 28V
V = 20V
I = 10mA
V = 10V
T = 300
μ
S
V
DS
= 0V
V = 28V
V = 28V
I
D
= 10mA
V
DS
= V
GS
TOTAL DEVICE
I = 4A
V
GS
= -5V
V
mA
μ
A
V
mhos
pF
pF
pF
V
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
P
O
= 120W
Thermal Resistance = 0.52 °C / W
f = 800MHz
V = 28V
I
DQ
= 4A
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
65
5
1
7
1
4
215
85
4.5
0.1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
mm
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
TetraFET
120W – 28V – 0.8GHz
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| D2085UK | TetraFET 120W - 28V - 0.8GHz |
| D2089UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(1W-28V-2GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(1W-28V-2GMHz,單端式)) |
| D2089 | METAL GATE RF SILICON FET |
| D2089UK | METAL GATE RF SILICON FET |
| D208 | Previous Vectron Model Numbers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D2086 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 2VA 2 X 9V |
| D2086 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 2VA 2X 9V |
| D2088 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 4VA 2 X 6V |
| D2088 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 4VA 2X 6V |
| D2089 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 4VA 2 X 9V |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。