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參數(shù)資料
| 型號： | D2054UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(10W-28V-1GHz,推拉式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（10W的- 28V的- 1GHz的，推挽式）（鍍金多用的DMOS射頻硅場效應管（10W的- 28V的- 1GHz的，推拉式）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 20K |
| 代理商： | D2054UK |
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
D2054UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk65
2
2
7
1
0.36
13
40
20:1
24
12
1
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
P
O
= 10W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.4A
V
DS
= 0V
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
BV
DSS
I
DSS
I
GSS
G
PS
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
h
VSWR
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
THj–case
Thermal Resistance Junction – Case
Max. 6.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
TOTAL DEVICE
PER SIDE
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