參數(shù)資料
型號: D2007UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CERAMIC, DA, 4 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 17K
代理商: D2007UK
D2007UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DA
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 500 MHz
METAL GATE RF SILICON FET
TetraFET
相關(guān)PDF資料
PDF描述
D2008UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-28V-400MHz,單端式))
D2008 METAL GATE RF SILICON FET
D2008UK METAL GATE RF SILICON FET
D200LC40B Super Fast Recovery Rectifiers(400V 200A)
D2010UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-1GHz,單端式))
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