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參數(shù)資料
| 型號(hào)： | D13003 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON POWER TRANSISTOR |
| 中文描述： | NPN硅功率晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | D13003 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON POWER TRANSISTOR
CD13003
TO-126
MARKING: CD
13003
Applications.
Suitable for Lighting, Switching Regulator and Motor Control.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Emitter -Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ Ta=25 deg C
Derate Above 25 deg C
Power Dissipation @ Tc=25 deg C
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for
Soldering Purposes: 1/8" from Case
for 5 Seconds.
(1) Pulse Test: Pulse Width= 5ms Duty Cycle =10%
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter ( sus) Voltage
Collector-Cuttoff Current
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
VALUE
600
400
9.0
1.5
3.0
0.75
1.5
2.25
4.5
1.4
11.2
45
320
-65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW /deg C
PD
W
mW /deg C
Tj, Tstg
deg C
Rth (j-c)
Rth (j-a)
3.12
89
deg C/W
deg C/W
TL
275
deg C
SYMBOL
VCBO
VCEO(sus)* IC=10mA, IB=0
ICBO
VCB=600V, IE=0
VCB=600V, IE=0,TC=100 deg C
IEBO
VEB=9V, IC=0
hFE*
IC=0.5A,VCE=5V
IC=2A,VCE=5V
TEST CONDITION
IC=1mA, IE=0
MIN
600
400
-
-
-
8.0
5.0
TYP
-
-
-
-
-
-
-
MAX
-
-
1.0
5.0
1.0
40
25
UNIT
V
V
mA
mA
mA
Emitter-Cuttoff Current
DC Current Gain
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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