參數(shù)資料
型號(hào)： D1222UK
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CERAMIC, DK, 5 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 19K
代理商： D1222UK
D1222UK
Document Number 3341
Issue 2
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current*
Storage Temperature
Maximum Operating Junction Temperature
290W
40V
±20V
30A
–65 to 150°C
200°C
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 175MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
MECHANICAL DATA
F
A
C
B
(2 pls)
K
2
3
E
1
G (4 pls)
5
4
D
N
M
J
I
H
O
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45
°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5
°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45
°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5
°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
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