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參數(shù)資料
| 型號(hào)： | D1221UK |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC, DW, 4 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | D1221UK |
D1221UK
Document Number 5316
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
4
1
3
2
E
F
A
C
D
G
H
B
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DW
PIN 1
DRAIN
PIN 3
GATE
PIN 2
SOURCE
PIN 4
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
mm
26.16
5.72
45°
7.11
0.13
1.52
0.43
7.67
Tol.
0.38
0.13
5°
0.13
0.03
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.055
0.060
0.120
Tol.
0.015
0.005
5°
0.005
0.001
0.005
0.008
REF
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