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參數(shù)資料
| 型號： | D1218UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-12.5V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(60W-12.5V-500MHz,推挽式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（60瓦- 12.5V - 500MHz的，推挽式）（鍍金多用的DMOS射頻硅場效應(yīng)管（60瓦- 12.5V - 500MHz的，推挽式）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | D1218UK |
D1218UK
Prelim. 9/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
290W
40V
±20V
30A
–65 to 150°C
200°C
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W – 12.5V – 500MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
MECHANICAL DATA
A
B
G
O
I
E
(2 pls)
F
J
Typ.
K
N
Q
M
D
C
P
H
1
3
2
4
8
6
7
5
DD
PIN 1
PIN 3
PIN 5
PIN 7
SOURCE (COMMON)
DRAIN 2
SOURCE (COMMON)
GATE 1
PIN 2
PIN 4
PIN 6
PIN 8
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
P
Q
mm
9.14
12.70
45
°
6.86
0.76
9.78
19.05
4.19
3.17
1.52R
1.65R
16.51
22.86
0.13
6.35
10.77
Tol.
0.13
0.13
5
°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.64
0.13
Inches
0.360
0.500
45
°
0.270
0.030
0.385
0.750
0.165
0.125
0.060R
0.065R
0.650
0.900
0.005
0.250
0.424
Tol.
0.005
0.005
5
°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.025
0.005
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