參數(shù)資料
型號: D1201
廠商: TT electronics Semelab Limited
英文描述: METAL GATE RF SILICON FET
中文描述: 金屬門射頻硅場效應(yīng)管
文件頁數(shù): 1/2頁
文件大?。?/td> 15K
代理商: D1201
D1201UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
G
K
M
J
I
E
D
(2 pls)
C
N
(typ)
A
B
F
(2 pls)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
USEFUL P
O
AT 1GHz
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
DP
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
16.51
6.35
45°
3.30
18.92
1.52
2.16
14.22
1.52
6.35
0.13
5.08
1.27 x 45°
Tol.
0.25
0.13
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45° 0.005
Tol.
0.010
0.005
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
相關(guān)PDF資料
PDF描述
D1201UK METAL GATE RF SILICON FET
D1202UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-12.5V-500MHz,單端式))
D1202 METAL GATE RF SILICON FET
D1202UK METAL GATE RF SILICON FET
D1203UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(30W-12.5V-500MHz,單端式))
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