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參數(shù)資料
| 型號(hào)： | D1022 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 54K |
| 代理商： | D1022 |
D1022UK
Prelim.11/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukP
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
292W
70V
±20V
15A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 10 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
METAL GATE RF SILICON FET
TetraFET
F
A
C
B
(
2 pls
)
K
2
3
E
1
G
(
4 pls
)
5
4
D
N
M
J
I
H
DK
PIN 1
SOURCE (COMMON)
PIN 3
DRAIN 2
PIN 5
GATE 1
PIN 2
DRAIN 1
PIN 4
GATE 2
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45
°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5
°
0.76
0.13
0.13
0.13
Inches
0.254
0.65R
45
°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5
°
0.03
0.005
0.005
0.005
0.13
0.13
0.13
0.02
0.13
0.005
0.005
0.005
0.001
0.005
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| D1022UK | METAL GATE RF SILICON FET |
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| D1023 | METAL GATE RF SILICON FET |
| D1023UK | METAL GATE RF SILICON FET |
| D1027UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(150W-28V-175MHz,推挽式)) |
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