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參數(shù)資料
| 型號(hào)： | D1019UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-175MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（20瓦- 28V的- 175MHz時(shí)，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（20瓦- 28V的- 175MHz時(shí)，單端式）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | D1019UK |
D1019UK
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
50W
70V
±20V
5A
–65 to 150°C
200°C
MECHANICAL DATA
4
1
3
2
E
F
A
C
D
G
H
B
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
PIN 1
DRAIN
PIN 3
GATE
PIN 2
SOURCE
PIN 4
SOURCE
DIM
A
B
C
D
E
F
G
H
mm
26.16
5.72
45°
7.11
0.13
1.52
0.43
7.67
Tol.
0.13
0.13
5°
0.13
0.02
0.13
0.20
REF
Inches
1.030
0.225
45°
0.280
0.005
0.55
0.060
0.120
Tol.
0.015
0.005
5°
0.005
0.001
0.005
0.008
REF
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