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參數(shù)資料
| 型號： | D1014UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(20W-28V-400MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（20瓦- 28V的，400MHz的單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（20瓦- 28V的，400MHz的單端式）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 15K |
| 代理商： | D1014UK |
D1014UK
Prelim. 12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 20W
V
DS
= 28V
f = 400MHz
V
DS
= 0
V
DS
= 28V
V
DS
= 28V
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
I
DQ
= 0.2A
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
70
2
1
7
1
1.6
13
60
20:1
120
50
5
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 2.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D101-4X | 功能描述:通用繼電器 RLY CLOSE DIFFERENT RoHS:否 制造商:Omron Electronics 觸點形式:1 Form A (SPST-NO) 觸點電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風格:Chassis 觸點材料: |
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| D10161NP | 制造商:Thomas & Betts 功能描述:NON-INS TUB RING TERM 8GA #8BH NKLP |
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