參數(shù)資料
型號(hào)： D1008UK
廠商： SEMELAB LTD
元件分類： 功率晶體管
英文描述： METAL GATE RF SILICON FET
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CERAMIC, DK, 5 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 43K
代理商： D1008UK
Parameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
D1008UK
9/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
70
2
1
7
1
1.6
13
50
20:1
120
60
5
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 2A
P
O
= 80W
V
DS
= 28V
f = 400MHz
I
DQ
= 0.4A
V
DS
= 28V
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
BV
DSS
I
DSS
I
GSS
G
PS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
TOTAL DEVICE
PER SIDE
相關(guān)PDF資料
PDF描述
D1009UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(150W-28V-500MHz,推挽式))
D1009UK METAL GATE RF SILICON FET
D1010UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(125W-28V-500MHz,推挽式))
D1010UK METAL GATE RF SILICON FET
D1011UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-28V-1GHz,單端式))
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