參數(shù)資料
型號: D1004UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, DT, 6 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 35K
代理商: D1004UK
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
175W
70V
±20V
20A
–65 to 150°C
200°C
MECHANICAL DATA
B
C
A
D
(2 pls)
E
F
G
H
I
J
K
M
N
1
4
3
2
5
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 16 dB MINIMUM
DT
PIN 1
SOURCE (COMMON)
PIN 3
SOURCE (COMMON)
PIN 5
DRAIN
PIN 2
GATE
PIN 4
SOURCE (COMMON)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF COMMUNICATIONS
from 1 MHz to 175 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
相關PDF資料
PDF描述
D1005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(80W-28V-175MHz,單端))
D1005 METAL GATE RF SILICON FET
D1005UK METAL GATE RF SILICON FET
D1006UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(120W-28V-175MHz,單端))
D1006UK METAL GATE RF SILICON FET
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