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參數(shù)資料
| 型號： | CZT2680 |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1.5A I(C) | SOT-223 |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁| 1.5AI（丙）|的SOT - 223 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 108K |
| 代理商： | CZT2680 |
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICM
PD
250
V
Collector-Emitter Voltage
200
V
Emitter-Base Voltage
6.0
V
Collector Current
1.5
A
Peak Collector Current
2.0
A
Power Dissipation
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
Θ
JA
-65 to +150
°C
Thermal Resistance
62.5
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VCB=200V
IC=100μA
IC=20mA
IE=100μA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
100
nA
250
435
V
200
275
V
6.0
9.0
V
45
150
mV
95
200
mV
135
500
mV
0.83
1.10
V
0.95
1.20
V
CZT2680
NPN HIGH VOLTAGE
SWITCHING POWER TRANSISTOR
SOT-223 CASE
Central
Semiconductor Corp.
TM
R0 (10-April 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount
Package. Typical applications include drivers
and general high voltage switching applications.
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| CZTA77 | TRANSISTOR | BJT | DARLINGTON | PNP | 1A I(C) | SOT-223 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CZT2680_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR |
| CZT2907A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON TRANSISTOR |
| CZT2907A TR | 制造商:Central Semiconductor Corp 功能描述: 制造商:Central Semiconductor Corp 功能描述:CZT2907A Series SOT-223 60 V Surface Mount Silicon Transistor |
| CZT2907A_10 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT PNP SILICON TRANSISTOR |
| CZT2907AT | 制造商:Central Semiconductor Corp 功能描述: |
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