參數(shù)資料
型號: CYM9263
廠商: Cypress Semiconductor Corp.
英文描述: 512K x 72 SRAM Module(512K x 72 靜態(tài)RAM模塊)
中文描述: 為512k × 72的SRAM模塊(靜態(tài)為512k × 72的RAM模塊)
文件頁數(shù): 6/11頁
文件大?。?/td> 246K
代理商: CYM9263
CYM9260
CYM9261B
CYM9262A
CYM9263
6
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –55°C to +125°C
Ambient Temperature
with Power Applied......................................... –0°C to +70°C
3.3V Supply Voltage to Ground Potential...... –0.5V to +4.5V
DC Voltage Applied to Outputs
in High Z State.............................................. –0.5V to +4.6V
DC Input Voltage ........................................... –0.5V to +4.6V
Output Current into Outputs (LOW)............................. 20 mA
Operating Range
Range
Ambient
Temperature
0°C to +70°C
V
CC
Commercial
3.3V ± 5%
Electrical Characteristics
Over the Operating Range
Parameter
V
IH
V
IL
V
OH
V
OL
I
CC (9260)
I
CC (9261)
I
CC (9262)
I
CC (9263)
Description
Test Condition
Min.
2.2
–0.3
2.4
Max.
Unit
V
V
V
V
mA
mA
mA
mA
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
Output LOW Voltage
V
CC
Operating Supply Current
V
CC
Operating Supply Current
V
CC
Operating Supply Current
V
CC
Operating Supply Current
V
CC
+ 0.3
0.8
V
CC
=Min., I
OH
= –4 mA
V
CC
=Min., I
OL
= 8 mA
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
V
CC
=Max., I
OUT
=0 mA, f=f
MAX
=1/t
RC
0.4
1000
1000
1200
2400
Capacitance
[1]
Parameter
C
A
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
9260
9261
9262
9263
9260
9261
9262
9263
9260
9261
9262
9263
9260
9261
9262
9262
Max.
24
14
20
40
24
16
20
40
9
5
8
16
6
3
5
10
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
Address Input Capacitance
C
I
Control Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
C
O
Input/Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
C
CLK
Clock Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Note:
1.
Tested initially and after any design or process changes that may affect these parameters.
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