參數(shù)資料
型號(hào): CYM8210B
英文描述: Memory
中文描述: 內(nèi)存
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 106K
代理商: CYM8210B
2M x 16 Static RAM Module
CYM8210BPM
Cypress Semiconductor Corporation
Document #: 38-05008 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised April 26, 2001
Features
High-density 32-megabit SRAM module
Low active power
—5.3W (max.) at 25 ns
SMD technology
TTL-compatible inputs and outputs
Low profile
—Max. height of 0.725 in.
Available in 80 pin SIMM Package
Functional Description
The CYM8210 is a high-performance 8-megabit static RAM
module organized as 2M words by 16 bits. This module is con-
structed using eight 512K x 8 SRAMs (CY62148) in SOJ pack-
ages mounted on an epoxy laminate board with pins.
Writing to each byte is accomplished by enabling the appropri-
ate Chip Select (E0, E1, E2, E3) and write enable (WH or WL).
Data on the input/output pins (I/O) is written into the mem-
ory location specified on the address pins (A
0
through A
17
).
Reading the device is accomplished by taking the appropriate
chip select (E0, E1, E2, E3) LOW while write enable (WE)
remains HIGH. Under these conditions, the contents of the
memory location specified on the address pins will appear on
the data input/output pins (I/O).
The data input/output pins stay at the high-impedance state
when write enable is LOW or the appropriate chip selects are
HIGH.
The CYM8210 module is shipped as a 80 pin SIMM.
LogicBlockDiagram
8210
1
A
0
A
17
G
WH
I/O
0
I/O
7
E2
I/O
8
I/O
15
E0
18
8
8
8
8
8
8
8
8
E1
E3
I/O
0
I/O
7
I/O
0
I/O
7
I/O
0
I/O
7
I/O
8
I/O
15
I/O
8
I/O
15
I/O
8
I/O
15
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
WL
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