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參數(shù)資料
| 型號： | CYM1946 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 512K x 32 Static RAM Module(512K x 32 靜態(tài)RAM模塊) |
| 中文描述： | 512k × 32的靜態(tài)RAM模塊（512k × 32的靜態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 158K |
| 代理商： | CYM1946 |
CYM1946
4
Switching Waveforms
Notes:
7.
8.
9.
WE is HIGH for read cycle.
Device is continuously selected, CS = V
, and OE= V
.
Address valid prior to or coincident with CS transition LOW.
Read Cycle No. 1
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
1851–5
ADDRESS
DATA OUT
[7,8]
Read Cycle No. 2
DATA VALID
t
RC
t
ACS
t
DOE
t
LZOE
t
LZCS
HIGH IMPEDANCE
t
HZOE
t
HZCS
HIGH
IMPEDANCE
1851–6
DATA OUT
OE
CS
V
SUPPLY
CURRENT
50%
50%
t
PU
ICC
ISB
t
PD
[7,9]
Write Cycle No. 1 (WE Controlled)
t
WC
DATA VALID
DATA UNDEFINED
HIGH IMPEDANCE
t
SCS
t
AW
t
SA
t
PWE
t
HA
t
HD
t
HZWE
t
LZWE
t
SD
CS
WE
1851–7
ADDRESS
DATA IN
DATA OUT
[6]
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