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參數(shù)資料
| 型號(hào)： | CYM1846V33P8-12C |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 32 3.3V Static RAM Module |
| 中文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 |
| 封裝： | PLASTIC, SIMM-72 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 338K |
| 代理商： | CYM1846V33P8-12C |
CYM1846V33
PRELIMINARY
Document #: 38-05275 Rev. **
Page 2 of 8
Maximum Ratings
[1]
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
55
°
C to +125
°
C
Ambient Temperature with
Power Applied...............................................
–
10
°
C to +85
°
C
Supply Voltage to Ground Potential...............
–
0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State................................................
–
0.5V to +V
CC
Electrical Characteristics
Over the Operating Range
DC Input Voltage ............................................
–
0.5V to +4.6V
Selection Guide
1846V33-12
12
820
120
1846V33-15
15
800
120
1846V33-20
20
780
120
1846V33-25
25
780
120
1846V33-35
35
780
120
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Shaded area contains advance information.
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
V
CC
Commercial
3.3V
+
10%
/
–
5%
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Test Conditions
Min.
2.4
Max.
Unit
V
V
V
V
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
V
CC
Operating Supply
Current
V
CC
= Min., I
OH
=
4.0 mA
V
CC
= Min., I
OL
= 4.0 mA
0.4
2.0
–
0.3
–
10
–
10
V
CC
+ 0.3
0.8
+10
+10
820
800
780
180
160
140
120
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
V
CC
= Max., I
OUT
= 0 mA,
CS
N
< V
IL,
F
=
F
MAX
12
15
20,
25,
35
–
12
15
20,
25,
35
I
SB1
Automatic CS Power-Down
Current
[2]
Max. V
CC
, CS > V
IH
,
Min. Duty Cycle = 100%
I
SB2
Automatic CS Power-Down
Current
[2]
Max. V
CC
, CS > V
CC
0.2V, V
IN
> V
CC
0.2V,
or V
IN
< 0.2V
Shaded area contains advance information.
Capacitance
[3]
Parameter
C
INA
C
INB
C
OUT
Notes:
1.
If device is operated at these settings, long term reliability will be affected.
2.
A pull-up resistor to V
on the CS input is required to keep the device deselected during V
CC
power-up, otherwise I
SB
will exceed values given.
3.
Tested on a sample basis.
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
32
8
8
Unit
pF
pF
pF
Input Capacitance (WE, OE, A
0
–
18
)
Input Capacitance (CS)
Output Capacitance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CYM1846V33P8-15C | 512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-20C | 512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-25C | 512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-35C | 512K x 32 3.3V Static RAM Module |
| CYM1846V33PM-12C | 512K x 32 3.3V Static RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYM1846V33P8-15C | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-20C | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-25C | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 32 3.3V Static RAM Module |
| CYM1846V33P8-35C | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 32 3.3V Static RAM Module |
| CYM1846V33PM-12C | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:512K x 32 3.3V Static RAM Module |
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