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參數(shù)資料
| 型號(hào)： | CYM1841V33 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x 32 3.3V Static RAM Module(256K x 32 位3.3V 靜態(tài)RAM模塊) |
| 中文描述： | 256K × 32 3.3靜態(tài)存儲(chǔ)器模塊（256K × 32位3.3V的靜態(tài)內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | CYM1841V33 |
CYM1841V33
4
Switching Characteristics
Over the Operating Range
[3]
(continued)
1841V33-20
1841V33-25
1841V33-35
Parameter
READ CYCLE
Description
Min.
Max.
Min.
Max.
Min.
Max.
Unit
t
RC
t
AA
t
OHA
t
ACS
t
DOE
t
LZOE
t
HZOE
t
LZCS
t
HZCS
t
PD
WRITE CYCLE
[6]
t
WC
t
SCS
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Read Cycle Time
20
25
35
ns
Address to Data Valid
20
25
35
ns
Data Hold from Address Change
3
3
3
ns
CS LOW to Data Valid
20
25
35
ns
OE LOW to Data Valid
12
15
18
ns
OE LOW to Low Z
0
0
0
ns
OE HIGH to High Z
CS LOW to Low Z
[4]
CS HIGH to High Z
[4, 5]
10
12
15
ns
3
3
3
ns
10
12
15
ns
CS HIGH to Power-Down
20
25
35
ns
Write Cycle Time
20
25
35
ns
CS LOW to Write End
17
20
30
ns
Address Set-Up to Write End
17
20
30
ns
Address Hold from Write End
3
3
3
ns
Address Set-Up to Write Start
2
2
2
ns
WE Pulse Width
15
20
30
ns
Data Set-Up to Write End
12
15
20
ns
Data Hold from Write End
2
2
2
ns
WE HIGH to Low Z
WE LOW to High Z
[5]
3
3
3
ns
0
12
0
12
0
15
ns
Switching Waveforms
Notes:
3.
Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
/I
and 30-pF load capacitance.
At any given temperature and voltage condition, t
is less than t
for any given device. These parameters are guaranteed and not 100% tested.
t
and t
are specified with C
= 5 pF as in part (b) of AC Test Loads and Waveforms. Transition is measured
±
500 mV from steady-state voltage.
The internal write time of the memory is defined by the overlap of CS LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
WE is HIGH for read cycle.
Device is continuously selected, CS = V
IL
, and OE= V
IL
.
4.
5.
6.
7.
8.
Read Cycle No. 1
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
1841V33–5
ADDRESS
DATA OUT
[7, 8]
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