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參數(shù)資料
| 型號(hào)： | CYDC128B16-40AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| 中文描述： | 8K X 16 DUAL-PORT SRAM, 40 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 1/26頁(yè) |
| 文件大小： | 580K |
| 代理商： | CYDC128B16-40AXC |
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1.8V 4k/8k/16k x 16 and 8k/16k x 8
ConsuMoBL Dual-Port Static RAM
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
Cypress Semiconductor Corporation
Document #: 001-01638 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 25, 2007
Features
True dual-ported memory cells which allow simulta-
neous access of the same memory location
4/8/16k × 16 and 8/16k × 8 organization
High-speed access: 40 ns
Ultra Low operating power
— Active: I
CC
= 15 mA (typical) at 55 ns
— Active: I
CC
= 25 mA (typical) at 40 ns
— Standby: I
SB3
= 2
μ
A (typical)
Port-independent 1.8V, 2.5V, and 3.0V I/Os
Lead (Pb)-free 14 x 14 x 1.4 mm 100-pin TQFP Package
Full asynchronous operation
Pin select for Master or Slave
Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
On-chip arbitration logic
On-chip semaphore logic
Input Read Registers and Output Drive Registers
INT flag for port-to-port communication
Separate upper-byte and lower-byte control
Commercial and industrial temperature ranges
Selection Guide for V
CC
= 1.8V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
1.8V-1.8V
40
25
2
2
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
1.8V-1.8V
55
15
2
2
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
Selection Guide for V
CC
= 2.5V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
2.5V-2.5V
40
39
6
4
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
2.5V-2.5V
55
28
6
4
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
Selection Guide for V
CC
= 3.0V
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-40
3.0V-3.0V
40
49
7
6
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
-55
3.0V-3.0V
55
42
7
6
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CYDC128B16-55AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC128B16-55AXI | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC256B16-40AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC256B16-55AXC | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC256B16-55AXI | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYDC128B16-55AXC | 制造商:Cypress Semiconductor 功能描述: |
| CYDC128B16-55AXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128K 8Kx16 Consumer Hi Vol Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDC256B16 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC256B16-40AXC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC256B16-55AXC | 制造商:Cypress Semiconductor 功能描述: |
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