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參數(shù)資料
| 型號(hào)： | CYDC064B16-40AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| 中文描述： | 4K X 16 DUAL-PORT SRAM, 40 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 14/26頁 |
| 文件大小： | 580K |
| 代理商： | CYDC064B16-40AXC |
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CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
Document #: 001-01638 Rev. *E
Page 14 of 26
t
HA
t
SA[28]
t
PWE
t
SD
t
HD
t
HZWE[30, 31]
t
LZWE[30, 31]
t
WDD[32]
t
DDD[32]
Busy Timing
[33]
Address Hold From Write End
0
0
ns
Address Set-up to Write Start
0
0
ns
Write Pulse Width
25
40
ns
Data Set-up to Write End
20
30
ns
Data Hold From Write End
0
0
ns
R/W LOW to High Z
15
25
ns
R/W HIGH to Low Z
0
0
ns
Write Pulse to Data Delay
55
80
ns
Write Data Valid to Read Data Valid
55
80
ns
t
BLA
t
BHA
t
BLC
t
BHC
t
PS[34]
t
WB
t
WH
t
BDD[35]
Interrupt Timing
[33]
BUSY LOW from Address Match
30
45
ns
BUSY HIGH from Address Mismatch
30
45
ns
BUSY LOW from CE LOW
30
45
ns
BUSY HIGH from CE HIGH
30
45
ns
Port Set-up for Priority
5
5
ns
R/W HIGH after BUSY (Slave)
0
0
ns
R/W HIGH after BUSY HIGH (Slave)
20
35
ns
BUSY HIGH to Data Valid
30
40
ns
t
INS
t
INR
Semaphore Timing
INT Set Time
35
45
ns
INT Reset Time
35
45
ns
t
SOP
t
SWRD
t
SPS
t
SAA
SEM Flag Update Pulse (OE or SEM)
10
15
ns
SEM Flag Write to Read Time
10
10
ns
SEM Flag Contention Window
10
10
ns
SEM Address Access Time
40
55
ns
Notes:
32.For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
33.Test conditions used are Load 2.
34.Add 2ns to this value when the I/O ports are operating at different voltages.
35.t
BDD
is a calculated parameter and is the greater of t
WDD
–t
PWE
(actual) or t
DDD
–t
SD
(actual).
Switching Characteristics for V
CC
= 1.8V
Over the Operating Range
[27]
(continued)
Parameter
Description
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
Unit
-40
-55
Min.
Max.
Min.
Max.
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CYDC064B16-55AXC | Replacement for National Semiconductor part number DM9334J. Buy from authorized manufacturer Rochester Electronics. |
| CYDC064B16-55AXI | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC128B08 | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC128B08-40AXC | Replacement for National Semiconductor part number DM9334N. Buy from authorized manufacturer Rochester Electronics. |
| CYDC128B08-55AXI | 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYDC064B16-55AXC | 制造商:Cypress Semiconductor 功能描述: |
| CYDC064B16-55AXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64K 4Kx16 Consumer Hi Vol Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDC1069AV33-10ZC | 制造商:Cypress Semiconductor 功能描述:MW |
| CYDC128B08 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
| CYDC128B08-40AXC | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM |
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