參數(shù)資料
型號(hào): CYDC064B08-40AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 1.8V 4k/8k/16k x 16 and 8k/16k x 8 ConsuMoBL Dual-Port Static RAM
中文描述: 8K X 8 DUAL-PORT SRAM, 40 ns, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, TQFP-100
文件頁(yè)數(shù): 11/26頁(yè)
文件大?。?/td> 580K
代理商: CYDC064B08-40AXC
CYDC256B16, CYDC128B16,
CYDC064B16, CYDC128B08,
CYDC064B08
Document #: 001-01638 Rev. *E
Page 11 of 26
Electrical Characteristics for V
CC
= 2.5V
Over the Operating Range
Parameter
V
OH
Description
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
-40
CYDC256B16,
CYDC128B16,
CYDC064B16,
CYDC128B08,
CYDC064B08
-55
Unit
V
V
V
V
V
V
V
P1 I/O
Voltage
2.5V (any port)
3.0V (any port)
2.5V (any port)
3.0V (any port)
2.5V (any port)
3.0V (any port)
2.5V (any port)
P2 I/O
Voltage
Min.
2.0
2.1
Typ.
Max.
Min.
2.0
2.1
Typ.
Max.
Output HIGH Voltage (I
OH
= –2 mA)
Output HIGH Voltage (I
OH
= –2 mA)
Output LOW Voltage (I
OL
= 2 mA
)
Output LOW Voltage (I
OL
= 2 mA
)
ODR Output LOW Voltage (I
OL
= 8 mA
)
V
OL
0.4
0.4
0.2
0.2
V
DDIO
+ 0.3
V
DDIO
+ 0.2
0.6
0.7
1
1
1
1
1
1
55
0.4
0.4
0.2
0.2
V
DDIO
+ 0.3
V
DDIO
+ 0.2
0.6
0.7
1
1
1
1
1
1
40
V
OL
ODR
V
IH
Input HIGH Voltage
1.7
1.7
3.0V (any port)
2.0
2.0
V
V
IL
Input LOW Voltage
2.5V (any port)
3.0V (any port)
2.5V
3.0V
2.5V
3.0V
2.5V
3.0V
2.5V
–0.3
–0.2
–1
–1
–1
–1
–1
–1
–0.3
–0.2
–1
–1
–1
–1
–1
–1
V
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
I
OZ
Output Leakage Current
2.5V
3.0V
2.5V
3.0V
2.5V
3.0V
2.5V
I
CEX
ODR
ODR Output Leakage Current.
V
OUT
= V
CC
I
IX
Input Leakage Current
I
CC
Operating Current (V
CC
= Max.,
I
OUT
= 0 mA) Outputs Disabled
Standby Current (Both Ports TTL
Level) CE
L
and CE
R
V
CC
– 0.2,
SEM
L
= SEM
R
= V
CC
– 0.2, f=f
MAX
Standby Current (One Port TTL
Level) CE
L
| CE
R
V
IH
, f = f
MAX
Standby Current (Both Ports
CMOS Level) CE
L
& CE
R
V
CC
0.2V, SEM
L
and SEM
R
>
V
CC
– 0.2V, f = 0
Standby Current (One Port CMOS
Level) CE
L
| CE
R
V
IH
, f = f
MAX[25]
Ind.
Ind.
39
28
I
SB1
Ind.
2.5V
2.5V
6
8
6
8
μ
A
I
SB2
Ind.
2.5V
2.5V
21
30
18
25
mA
I
SB3
Ind.
2.5V
2.5V
4
6
4
6
μ
A
I
SB4
2.5V
2.5V
21
30
18
25
mA
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