參數(shù)資料
型號(hào)： CYD18S36V
廠商： Cypress Semiconductor Corp.
英文描述： FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
中文描述： FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步雙口RAM（FLEx36TM 3.3 32K/64K/128K/256K/512 × 36同步雙端口RAM）的
文件頁數(shù)： 9/28頁
文件大小： 608K
代理商： CYD18S36V
CYD01S36V
CYD02S36V/CYD04S36V
CYD09S36V/CYD18S36V
Document #: 38-06076 Rev. *E
Page 9 of 28
IEEE 1149.1 Serial Boundary Scan (JTAG)
[23]
The FLEx36 family devices incorporate an IEEE 1149.1 serial
boundary scan test access port (TAP). The TAP controller
functions in a manner that does not conflict with the operation
of other devices using 1149.1-compliant TAPs. The TAP
operates using JEDEC-standard 3.3V I/O logic levels. It is
composed of three input connections and one output
connection required by the test logic defined by the standard.
Performing a TAP Reset
A reset is performed by forcing TMS HIGH (V
DD
) for five rising
edges of TCK. This reset does not affect the operation of the
devices, and may be performed while the device is operating.
An MRST must be performed on the devices after power-up.
Performing a Pause/Restart
When a SHIFT-DR PAUSE-DR SHIFT-DR is performed the
scan chain will output the next bit in the chain twice. For
example, if the value expected from the chain is 1010101, the
device will output a 11010101. This extra bit will cause some
testers to report an erroneous failure for the devices in a scan
test. Therefore the tester should be configured to never enter
the PAUSE-DR state.
Boundary Scan Hierarchy for 9-Mbit and 18-Mbit Devices
Internally, the devices have multiple DIEs. Each DIE contains
all the circuitry required to support boundary scan testing. The
circuitry includes the TAP, TAP controller, instruction register,
and data registers. The circuity and operation of the DIE
boundary scan are described in detail below.
The scan chain for 9-Mbit and 18-Mbit devices uses a hierar-
chical approach as shown in
Figure 3
and
Figure 4
. TMS and
TCK are connected in parallel to each DIE to drive all 2- or
4-TAP controllers in unison. In many cases, each DIE will be
supplied with the same instruction. In other cases, it might be
useful to supply different instructions to each DIE. One
example would be testing the device ID of one DIE while
bypassing the rest.
Each pin of the devices is typically connected to multiple DIEs.
For connectivity testing with the EXTEST instruction, it is
desirable to check the internal connections between DIEs as
well as the external connections to the package. This can be
accomplished by merging the netlist of the devices with the
netlist of the user’s circuit board. To facilitate boundary scan
testing of the devices, Cypress provides the BSDL file for each
DIE, the internal netlist of the device, and a description of the
device scan chain. The user can use these materials to easily
integrate the devices into the board’s boundary scan
environment. Further information can be found in the Cypress
application note
Using JTAG Boundary Scan For System in a
Package (SIP) Dual-Port SRAMs
.
Notes:
22.The “X” in this diagram represents the counter upper bits.
23.Boundary scan is IEEE 1149.1-compatible. See “Performing a Pause/Restart” for deviation from strict 1149.1 compliance.
2
16
2
15
2
6
2
1
2
5
2
2
2
4
2
3
2
0
2
16
2
15
2
6
2
1
2
5
2
2
2
4
2
3
2
0
2
16
2
15
2
6
2
1
2
5
2
2
2
4
2
3
2
0
2
16
2
15
2
6
2
1
2
5
2
2
2
4
2
3
2
0
H
H
L
H
1
1
0s
1
0
1
0
1
0
1
0
0
Xs
1
X
0
X
0
X
0
1
1
Xs
1
X
1
X
1
X
1
0
0
Xs
1
X
0
X
0
X
0
Masked Address
Unmasked Address
Mask
Register
bit-0
Address
Counter
bit-0
CNTINT
Example:
Load
Counter-Mask
Register = 3F
Load
Address
Counter = 8
Max
Address
Register
Max + 1
Address
Register
Figure 2. Programmable Counter-Mask Register Operation
[1, 22]
相關(guān)PDF資料
PDF描述
CYD02S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
CYD04S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
CYD09S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM(FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36同步雙端口RAM)
CYD18S72V18 FullFlex Synchronous SDR Dual-Port SRAM(FullFlex同步SDR雙端口SRAM)
CYD04S72V18 FullFlex Synchronous SDR Dual-Port SRAM(FullFlex同步SDR雙端口SRAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CYD18S36V-100BBC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 18MBIT 512KX36 5.2NS 256BGA - Bulk
CYD18S36V-100BBI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 18M-Bit 512K x 36 5.2ns 256-Pin FBGA 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 18MBIT 512KX36 5.2NS 256FBGA - Bulk
CYD18S36V-133BBC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 18MBIT 512KX36 5NS 256BGA - Bulk
CYD18S36V-133BBI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18M Sync Dual Port 512K x 36 3.3V IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CYD18S36V18 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:18-Mb/9-Mb/4-Mb x36/x18 FullFlex⑩ Dual-Ports
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